Display options
Share it on

Chemphyschem. 2016 Apr 18;17(8):1095-7. doi: 10.1002/cphc.201600054. Epub 2016 Feb 17.

TCNQ Interlayers for Colloidal Quantum Dot Light-Emitting Diodes.

Chemphyschem : a European journal of chemical physics and physical chemistry

Weon-kyu Koh, Taeho Shin, Changhoon Jung, Dr-Kyung-Sang Cho

Affiliations

  1. Device Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea. [email protected].
  2. Analytical Engineering Group, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea.
  3. Device Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16676, South Korea.

PMID: 26853901 DOI: 10.1002/cphc.201600054

Abstract

CdSe/CdS/ZnS quantum dot light-emitting diodes (QD-LEDs) show increased brightness (from ca. 18 000 to 27 000 cd m(-2) ) with 7,7,8,8-tetracyanoquinodimethane (TCNQ) between the QD and electron-transfer layers of ZnO nanoparticles. As QD/ZnO layers are known to have interface defects, our finding leads to the importance of interface engineering for QD-LEDs. Although the photoluminescent intensity and decay lifetime of ZnO/TCNQ/QD layers are similar to those of ZnO/QD layers, cyclic voltammetry suggests improved charge transfer of TCNQ/ZnO layers compared to that of pure ZnO layers. This helps us to understand the mechanism of electrically driven QD-LED behavior, which differs from that of conventional solid-state LEDs, and enables the rational design of QD-based optoelectronic devices.

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: 7,7,8,8-tetracyanoquinodimethane; charge transfer; interlayers; light-emitting diodes; quantum dots

Publication Types