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Skuza JR, Scott DW, Mundle RM, et al. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications. Sci Rep. 2016;6:21040doi: 10.1038/srep21040.
Skuza, J. R., Scott, D. W., Mundle, R. M., & Pradhan, A. K. (2016). Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications. Scientific reports, 621040. https://doi.org/10.1038/srep21040
Skuza, J R, et al. "Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications." Scientific reports vol. 6 (2016): 21040. doi: https://doi.org/10.1038/srep21040
Skuza JR, Scott DW, Mundle RM, Pradhan AK. Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications. Sci Rep. 2016 Feb 17;6:21040. doi: 10.1038/srep21040. PMID: 26884225; PMCID: PMC4756692.
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Sci Rep. 2016 Feb 17;6:21040. doi: 10.1038/srep21040.

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications.

Scientific reports

J R Skuza, D W Scott, R M Mundle, A K Pradhan

Affiliations

  1. Center for Materials Research, Norfolk State University, Norfolk, VA, 23504, USA.
  2. Department of Engineering, Norfolk State University, Norfolk, VA, 23504, USA.

PMID: 26884225 PMCID: PMC4756692 DOI: 10.1038/srep21040

Abstract

We demonstrate the electro-thermal control of aluminum-doped zinc oxide (Al:ZnO) /vanadium dioxide (VO2) multilayered thin films, where the application of a small electric field enables precise control of the applied heat to the VO2 thin film to induce its semiconductor-metal transition (SMT). The transparent conducting oxide nature of the top Al:ZnO film can be tuned to facilitate the fine control of the SMT of the VO2 thin film and its associated properties. In addition, the Al:ZnO film provides a capping layer to the VO2 thin film, which inhibits oxidation to a more energetically favorable and stable V2O5 phase. It also decreases the SMT of the VO2 thin film by approximately 5-10 °C because of an additional stress induced on the VO2 thin film and/or an alteration of the oxygen vacancy concentration in the VO2 thin film. These results have significant impacts on technological applications for both passive and active devices by exploiting this near-room-temperature SMT.

References

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