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Rev Sci Instrum. 2016 Jan;87(1):014704. doi: 10.1063/1.4939673.

Sub-terahertz microsecond optically controlled switch with GaAs active element beyond the photoelectric threshold.

The Review of scientific instruments

M Kulygin, G Denisov, K Vlasova, N Andreev, S Shubin, S Salahetdinov

Affiliations

  1. Institute of Applied Physics Russian Academy of Sciences, 46 Ulyanova Street, Nizhny Novgorod 603950, Russia.

PMID: 26827338 DOI: 10.1063/1.4939673

Abstract

We study an unusual working regime of a recently developed sub-terahertz microwave cavity-based switch. The resonator cavity includes a semiconductor plate which is illuminated by laser emission beyond the photoelectric threshold. Despite a significant change to the conventional process of photoelectric effect we have found that the switch works. Typical switching performance rate is about 1 μs for the regime. A process of carrier density relaxation beyond the photoelectric threshold is discussed. An idea of diagnostic method for the semiconductor's quality is proposed.

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