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Stanchu HV, Kuchuk AV, Kladko VP, et al. X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires. Nanoscale Res Lett. 2016;11(1):81doi: 10.1186/s11671-016-1299-7.
Stanchu, H. V., Kuchuk, A. V., Kladko, V. P., Ware, M. E., Mazur, Y. I., Zytkiewicz, Z. R., Belyaev, A. E., & Salamo, G. J. (2016). X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires. Nanoscale research letters, 11(1), 81. https://doi.org/10.1186/s11671-016-1299-7
Stanchu, Hryhorii V, et al. "X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires." Nanoscale research letters vol. 11,1 (2016): 81. doi: https://doi.org/10.1186/s11671-016-1299-7
Stanchu HV, Kuchuk AV, Kladko VP, Ware ME, Mazur YI, Zytkiewicz ZR, Belyaev AE, Salamo GJ. X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires. Nanoscale Res Lett. 2016 Dec;11(1):81. doi: 10.1186/s11671-016-1299-7. Epub 2016 Feb 09. PMID: 26860714; PMCID: PMC4747973.
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Nanoscale Res Lett. 2016 Dec;11(1):81. doi: 10.1186/s11671-016-1299-7. Epub 2016 Feb 09.

X-ray Reciprocal Space Mapping of Graded Al x Ga1 - x N Films and Nanowires.

Nanoscale research letters

Hryhorii V Stanchu, Andrian V Kuchuk, Vasyl P Kladko, Morgan E Ware, Yuriy I Mazur, Zbigniew R Zytkiewicz, Alexander E Belyaev, Gregory J Salamo

Affiliations

  1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. [email protected].
  2. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. [email protected].
  3. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. [email protected].
  4. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. [email protected].
  5. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. [email protected].
  6. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. [email protected].
  7. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland. [email protected].
  8. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680, Kyiv, Ukraine. [email protected].
  9. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR, 72701, USA. [email protected].

PMID: 26860714 PMCID: PMC4747973 DOI: 10.1186/s11671-016-1299-7

Abstract

The depth distribution of strain and composition in graded Al x Ga1 - x N films and nanowires (NWs) are studied theoretically using the kinematical theory of X-ray diffraction. By calculating [Formula: see text] reciprocal space maps (RSMs), we demonstrate significant differences in the intensity distributions from graded Al x Ga1 - x N films and NWs. We attribute these differences to relaxation of the substrate-induced strain on the NWs free side walls. Finally, we demonstrate that the developed X-ray reciprocal space map model allows for reliable depth profiles of strain and Al composition determination in both Al x Ga1 - x N films and NWs.

Keywords: Al x Ga1 − x N; Asymmetrical RSM; Graded films and nanowires; Kinematical theory

References

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