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Shin CS, Lee BS, Choi S, et al. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source. Rev Sci Instrum. 2016;87(2):02A713doi: 10.1063/1.4932126.
Shin, C. S., Lee, B. S., Choi, S., Yoon, J. H., Kim, H. G., Ok, J. W., Park, J. Y., Kim, S. J., Bahng, J., Hong, J., Lee, S. W., & Won, M. S. (2016). Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source. The Review of scientific instruments, 87(2), 02A713. https://doi.org/10.1063/1.4932126
Shin, Chang Seouk, et al. "Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source." The Review of scientific instruments vol. 87,2 (2016): 02A713. doi: https://doi.org/10.1063/1.4932126
Shin CS, Lee BS, Choi S, Yoon JH, Kim HG, Ok JW, Park JY, Kim SJ, Bahng J, Hong J, Lee SW, Won MS. Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source. Rev Sci Instrum. 2016 Feb;87(2):02A713. doi: 10.1063/1.4932126. PMID: 26931931.
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Rev Sci Instrum. 2016 Feb;87(2):02A713. doi: 10.1063/1.4932126.

Nitrogen ion implantation into various materials using 28 GHz electron cyclotron resonance ion source.

The Review of scientific instruments

Chang Seouk Shin, Byoung-Seob Lee, Seyong Choi, Jang-Hee Yoon, Hyun Gyu Kim, Jung-Woo Ok, Jin Yong Park, Seong Jun Kim, Jungbae Bahng, Jonggi Hong, Seung Wook Lee, Mi-Sook Won

Affiliations

  1. Busan Center, Korea Basic Science Institute, Busan 609-735, South Korea.
  2. School of Mechanical Engineering, Pusan National University, Pusan 609-735, South Korea.

PMID: 26931931 DOI: 10.1063/1.4932126

Abstract

The installation of the 28 GHz electron cyclotron resonance ion source (ECRIS) ion implantation beamline was recently completed at the Korea Basic Science Institute. The apparatus contains a beam monitoring system and a sample holder for the ion implantation process. The new implantation system can function as a multipurpose tool since it can implant a variety of ions, ranging hydrogen to uranium, into different materials with precise control and with implantation areas as large as 1-10 mm(2). The implantation chamber was designed to measure the beam properties with a diagnostic system as well as to perform ion implantation with an in situ system including a mass spectrometer. This advanced implantation system can be employed in novel applications, including the production of a variety of new materials such as metals, polymers, and ceramics and the irradiation testing and fabrication of structural and functional materials to be used in future nuclear fusion reactors. In this investigation, the first nitrogen ion implantation experiments were conducted using the new system. The 28 GHz ECRIS implanted low-energy, multi-charged nitrogen ions into copper, zinc, and cobalt substrates, and the ion implantation depth profiles were obtained. SRIM 2013 code was used to calculate the profiles under identical conditions, and the experimental and simulation results are presented and compared in this report. The depths and ranges of the ion distributions in the experimental and simulation results agree closely and demonstrate that the new system will enable the treatment of various substrates for advanced materials research.

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