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Wang P, Chen Q, Wu X, et al. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure. Nanoscale Res Lett. 2016;11(1):119doi: 10.1186/s11671-016-1339-3.
Wang, P., Chen, Q., Wu, X., Cao, C., Wang, S., & Gong, Q. (2016). Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure. Nanoscale research letters, 11(1), 119. https://doi.org/10.1186/s11671-016-1339-3
Wang, Peng, et al. "Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure." Nanoscale research letters vol. 11,1 (2016): 119. doi: https://doi.org/10.1186/s11671-016-1339-3
Wang P, Chen Q, Wu X, Cao C, Wang S, Gong Q. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure. Nanoscale Res Lett. 2016 Dec;11(1):119. doi: 10.1186/s11671-016-1339-3. Epub 2016 Mar 01. PMID: 26932758; PMCID: PMC4773316.
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