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Kim DJ, Connell JG, Seo SS, et al. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films. Nanotechnology. 2016;27(15):155705doi: 10.1088/0957-4484/27/15/155705.
Kim, D. J., Connell, J. G., Seo, S. S., & Gruverman, A. (2016). Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films. Nanotechnology, 27(15), 155705. https://doi.org/10.1088/0957-4484/27/15/155705
Kim, D J, et al. "Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films." Nanotechnology vol. 27,15 (2016): 155705. doi: https://doi.org/10.1088/0957-4484/27/15/155705
Kim DJ, Connell JG, Seo SS, Gruverman A. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films. Nanotechnology. 2016 Apr 15;27(15):155705. doi: 10.1088/0957-4484/27/15/155705. Epub 2016 Mar 02. PMID: 26933770.
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Nanotechnology. 2016 Apr 15;27(15):155705. doi: 10.1088/0957-4484/27/15/155705. Epub 2016 Mar 02.

Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films.

Nanotechnology

D J Kim, J G Connell, S S A Seo, A Gruverman

Affiliations

  1. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA. Center for Correlated Electron Systems, Institute for Basic Science, Seoul 151-742, Korea. Department of Physics and Astronomy, Seoul National University, Seoul 151-742, Korea.

PMID: 26933770 DOI: 10.1088/0957-4484/27/15/155705

Abstract

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects.

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