Display options
Cite
Roy A, Movva HC, Satpati B, et al. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS Appl Mater Interfaces. 2016;8(11):7396-402doi: 10.1021/acsami.6b00961.
Roy, A., Movva, H. C., Satpati, B., Kim, K., Dey, R., Rai, A., Pramanik, T., Guchhait, S., Tutuc, E., & Banerjee, S. K. (2016). Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS applied materials & interfaces, 8(11), 7396-402. https://doi.org/10.1021/acsami.6b00961
Roy, Anupam, et al. "Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy." ACS applied materials & interfaces vol. 8,11 (2016): 7396-402. doi: https://doi.org/10.1021/acsami.6b00961
Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7396-402. doi: 10.1021/acsami.6b00961. Epub 2016 Mar 11. PMID: 26939890.
Copy Download .nbib Format: NLM
Share it on

ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7396-402. doi: 10.1021/acsami.6b00961. Epub 2016 Mar 11.

Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy.

ACS applied materials & interfaces

Anupam Roy, Hema C P Movva, Biswarup Satpati, Kyounghwan Kim, Rik Dey, Amritesh Rai, Tanmoy Pramanik, Samaresh Guchhait, Emanuel Tutuc, Sanjay K Banerjee

Affiliations

  1. Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
  2. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics , 1/AF, Bidhannagar, Kolkata 700 064, India.

PMID: 26939890 DOI: 10.1021/acsami.6b00961

Abstract

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.

Keywords: molecular beam epitaxy; molybdenum diselenide; molybdenum ditelluride; transmission electron microscopy; two-dimensional; variable-range hopping

Publication Types