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Song JF, Luo XS, Lim AE, et al. Integrated photonics with programmable non-volatile memory. Sci Rep. 2016;6:22616doi: 10.1038/srep22616.
Song, J. F., Luo, X. S., Lim, A. E., Li, C., Fang, Q., Liow, T. Y., Jia, L. X., Tu, X. G., Huang, Y., Zhou, H. F., & Lo, G. Q. (2016). Integrated photonics with programmable non-volatile memory. Scientific reports, 622616. https://doi.org/10.1038/srep22616
Song, Jun-Feng, et al. "Integrated photonics with programmable non-volatile memory." Scientific reports vol. 6 (2016): 22616. doi: https://doi.org/10.1038/srep22616
Song JF, Luo XS, Lim AE, Li C, Fang Q, Liow TY, Jia LX, Tu XG, Huang Y, Zhou HF, Lo GQ. Integrated photonics with programmable non-volatile memory. Sci Rep. 2016 Mar 04;6:22616. doi: 10.1038/srep22616. PMID: 26941113; PMCID: PMC4778119.
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Sci Rep. 2016 Mar 04;6:22616. doi: 10.1038/srep22616.

Integrated photonics with programmable non-volatile memory.

Scientific reports

Jun-Feng Song, Xian-Shu Luo, Andy Eu-Jin Lim, Chao Li, Qing Fang, Tsung-Yang Liow, Lian-Xi Jia, Xiao-Guang Tu, Ying Huang, Hai-Feng Zhou, Guo-Qiang Lo

Affiliations

  1. Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR), Singapore, Singapore 117685.
  2. State Key Laboratory on Integrated opto-electronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.

PMID: 26941113 PMCID: PMC4778119 DOI: 10.1038/srep22616

Abstract

Silicon photonics integrated circuits (Si-PIC) with well-established active and passive building elements are progressing towards large-scale commercialization in optical communications and high speed optical interconnects applications. However, current Si-PICs do not have memory capabilities, in particular, the non-volatile memory functionality for energy efficient data storage. Here, we propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. A micro-ring resonator (MRR) was built using the PMC to optically read the memory states. Switching energy smaller than 20 pJ was achieved. Additionally, a MRR memory array was employed to demonstrate a four-bit memory read capacity. Theoretically, this can be increased up to ~400 times using a 100 nm free spectral range broadband light source. The fundamental concept of this design provides a route to eliminate the von Neumann bottleneck. The energy-efficient optical storage can complement on-chip optical interconnects for neutral networking, memory input/output interfaces and other computational intensive applications.

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