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Constantinou M, Rigas GP, Castro FA, et al. Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock. ACS Nano. 2016;10(4):4384-94doi: 10.1021/acsnano.6b00005.
Constantinou, M., Rigas, G. P., Castro, F. A., Stolojan, V., Hoettges, K. F., Hughes, M. P., Adkins, E., Korgel, B. A., & Shkunov, M. (2016). Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock. ACS nano, 10(4), 4384-94. https://doi.org/10.1021/acsnano.6b00005
Constantinou, Marios, et al. "Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock." ACS nano vol. 10,4 (2016): 4384-94. doi: https://doi.org/10.1021/acsnano.6b00005
Constantinou M, Rigas GP, Castro FA, Stolojan V, Hoettges KF, Hughes MP, Adkins E, Korgel BA, Shkunov M. Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock. ACS Nano. 2016 Apr 26;10(4):4384-94. doi: 10.1021/acsnano.6b00005. Epub 2016 Mar 28. PMID: 27002685.
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ACS Nano. 2016 Apr 26;10(4):4384-94. doi: 10.1021/acsnano.6b00005. Epub 2016 Mar 28.

Simultaneous Tunable Selection and Self-Assembly of Si Nanowires from Heterogeneous Feedstock.

ACS nano

Marios Constantinou, Grigorios Panagiotis Rigas, Fernando A Castro, Vlad Stolojan, Kai F Hoettges, Michael P Hughes, Emily Adkins, Brian A Korgel, Maxim Shkunov

Affiliations

  1. National Physical Laboratory (NPL) , Teddington, Middlesex, TW110LW, United Kingdom.
  2. Department of Chemical Engineering, Texas Materials Institute and Center for Nano and Molecular Science and Technology, The University of Texas , Austin, Texas 78712-1062, United States.

PMID: 27002685 DOI: 10.1021/acsnano.6b00005

Abstract

Semiconducting nanowires (NWs) are becoming essential nanobuilding blocks for advanced devices from sensors to energy harvesters, however their full technology penetration requires large scale materials synthesis together with efficient NW assembly methods. We demonstrate a scalable one-step solution process for the direct selection, collection, and ordered assembly of silicon NWs with desired electrical properties from a poly disperse collection of NWs obtained from a supercritical fluid-liquid-solid growth process. Dielectrophoresis (DEP) combined with impedance spectroscopy provides a selection mechanism at high signal frequencies (>500 kHz) to isolate NWs with the highest conductivity and lowest defect density. The technique allows simultaneous control of five key parameters in NW assembly: selection of electrical properties, control of NW length, placement in predefined electrode areas, highly preferential orientation along the device channel, and control of NWs deposition density from few to hundreds per device. Direct correlation between DEP signal frequency and deposited NWs conductivity is confirmed by field-effect transistor and conducting AFM data. Fabricated NW transistor devices demonstrate excellent performance with up to 1.6 mA current, 10(6)-10(7) on/off ratio and hole mobility of 50 cm(2) V(-1) s(-1).

Keywords: Clausius−Mossotti factor; dielectrophoresis; nanowire conductivity; nanowire field-effect transistors; selection; self-assembly; silicon nanowires

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