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Connell JG, Nichols J, Gruenewald JH, et al. Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water. Sci Rep. 2016;6:23621doi: 10.1038/srep23621.
Connell, J. G., Nichols, J., Gruenewald, J. H., Kim, D. W., & Seo, S. S. (2016). Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water. Scientific reports, 623621. https://doi.org/10.1038/srep23621
Connell, J G, et al. "Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water." Scientific reports vol. 6 (2016): 23621. doi: https://doi.org/10.1038/srep23621
Connell JG, Nichols J, Gruenewald JH, Kim DW, Seo SS. Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water. Sci Rep. 2016 Apr 01;6:23621. doi: 10.1038/srep23621. PMID: 27033248; PMCID: PMC4817030.
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Sci Rep. 2016 Apr 01;6:23621. doi: 10.1038/srep23621.

Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water.

Scientific reports

J G Connell, J Nichols, J H Gruenewald, D-W Kim, S S A Seo

Affiliations

  1. Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506, USA.
  2. Department of Physics, Ewha Womans University, Seoul 120-750, Korea.

PMID: 27033248 PMCID: PMC4817030 DOI: 10.1038/srep23621

Abstract

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

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