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Zeng S, Lü W, Huang Z, et al. Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface. ACS Nano. 2016;10(4):4532-7doi: 10.1021/acsnano.6b00409.
Zeng, S., Lü, W., Huang, Z., Liu, Z., Han, K., Gopinadhan, K., Li, C., Guo, R., Zhou, W., Ma, H. H., Jian, L., Venkatesan, T., & Ariando. (2016). Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface. ACS nano, 10(4), 4532-7. https://doi.org/10.1021/acsnano.6b00409
Zeng, Shengwei, et al. "Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface." ACS nano vol. 10,4 (2016): 4532-7. doi: https://doi.org/10.1021/acsnano.6b00409
Zeng S, Lü W, Huang Z, Liu Z, Han K, Gopinadhan K, Li C, Guo R, Zhou W, Ma HH, Jian L, Venkatesan T, Ariando. Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface. ACS Nano. 2016 Apr 26;10(4):4532-7. doi: 10.1021/acsnano.6b00409. Epub 2016 Mar 14. PMID: 26974812.
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ACS Nano. 2016 Apr 26;10(4):4532-7. doi: 10.1021/acsnano.6b00409. Epub 2016 Mar 14.

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface.

ACS nano

Shengwei Zeng, Weiming Lü, Zhen Huang, Zhiqi Liu, Kun Han, Kalon Gopinadhan, Changjian Li, Rui Guo, Wenxiong Zhou, Haijiao Harsan Ma, Linke Jian, Thirumalai Venkatesan, Ariando

Affiliations

  1. NUSNNI-NanoCore, National University of Singapore , Singapore 117411, Singapore.
  2. Department of Physics, National University of Singapore , Singapore 117542, Singapore.
  3. National University of Singapore Graduate School for Integrative Sciences and Engineering (NGS) , 28 Medical Drive, Singapore 117456, Singapore.
  4. Department of Materials Science and Engineering, National University of Singapore , Singapore 117575, Singapore.
  5. Department of Electrical and Computer Engineering, National University of Singapore , Singapore 117576, Singapore.

PMID: 26974812 DOI: 10.1021/acsnano.6b00409

Abstract

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (LAO/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm(2)/(V s) are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

Keywords: Ionic liquid; LaAlO3/SrTiO3 interfaces; Shubnikov−de Haas (SdH) oscillation; electric field effect; electronic double layer transistors (EDLT); mobility

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