Display options
Cite
Tryputen L, Tu KH, Piotrowski SK, et al. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions. Nanotechnology. 2016;27(18):185302doi: 10.1088/0957-4484/27/18/185302.
Tryputen, L., Tu, K. H., Piotrowski, S. K., Bapna, M., Majetich, S. A., Sun, C., Voyles, P. M., Almasi, H., Wang, W., Vargas, P., Tresback, J. S., & Ross, C. A. (2016). Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions. Nanotechnology, 27(18), 185302. https://doi.org/10.1088/0957-4484/27/18/185302
Tryputen, Larysa, et al. "Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions." Nanotechnology vol. 27,18 (2016): 185302. doi: https://doi.org/10.1088/0957-4484/27/18/185302
Tryputen L, Tu KH, Piotrowski SK, Bapna M, Majetich SA, Sun C, Voyles PM, Almasi H, Wang W, Vargas P, Tresback JS, Ross CA. Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions. Nanotechnology. 2016 May 06;27(18):185302. doi: 10.1088/0957-4484/27/18/185302. Epub 2016 Mar 23. PMID: 27005330.
Copy Download .nbib Format: NLM
Share it on

Nanotechnology. 2016 May 06;27(18):185302. doi: 10.1088/0957-4484/27/18/185302. Epub 2016 Mar 23.

Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions.

Nanotechnology

Larysa Tryputen, Kun-Hua Tu, Stephan K Piotrowski, Mukund Bapna, Sara A Majetich, Congli Sun, Paul M Voyles, Hamid Almasi, Weigang Wang, Patricio Vargas, Jason S Tresback, Caroline A Ross

Affiliations

  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

PMID: 27005330 DOI: 10.1088/0957-4484/27/18/185302

Abstract

Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

Publication Types