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Zhang QJ, He JH, Zhuang H, et al. Ternary Flexible Electro-resistive Memory Device based on Small Molecules. Chem Asian J. 2016;11(10):1624-30doi: 10.1002/asia.201600304.
Zhang, Q. J., He, J. H., Zhuang, H., Li, H., Li, N. J., Xu, Q. F., Chen, D. Y., & Lu, J. M. (2016). Ternary Flexible Electro-resistive Memory Device based on Small Molecules. Chemistry, an Asian journal, 11(10), 1624-30. https://doi.org/10.1002/asia.201600304
Zhang, Qi-Jian, et al. "Ternary Flexible Electro-resistive Memory Device based on Small Molecules." Chemistry, an Asian journal vol. 11,10 (2016): 1624-30. doi: https://doi.org/10.1002/asia.201600304
Zhang QJ, He JH, Zhuang H, Li H, Li NJ, Xu QF, Chen DY, Lu JM. Ternary Flexible Electro-resistive Memory Device based on Small Molecules. Chem Asian J. 2016 May 20;11(10):1624-30. doi: 10.1002/asia.201600304. Epub 2016 Apr 21. PMID: 27061009.
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Chem Asian J. 2016 May 20;11(10):1624-30. doi: 10.1002/asia.201600304. Epub 2016 Apr 21.

Ternary Flexible Electro-resistive Memory Device based on Small Molecules.

Chemistry, an Asian journal

Qi-Jian Zhang, Jing-Hui He, Hao Zhuang, Hua Li, Na-Jun Li, Qing-Feng Xu, Dong-Yun Chen, Jian-Mei Lu

Affiliations

  1. College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China.
  2. College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China. [email protected].
  3. College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China. [email protected].

PMID: 27061009 DOI: 10.1002/asia.201600304

Abstract

Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever-growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule-based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties.

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords: memory devices; molecular stacking; side chains; ternary memory

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