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Hanzawa K, Sato H, Hiramatsu H, et al. Electric field-induced superconducting transition of insulating FeSe thin film at 35 K. Proc Natl Acad Sci U S A. 2016;113(15):3986-90doi: 10.1073/pnas.1520810113.
Hanzawa, K., Sato, H., Hiramatsu, H., Kamiya, T., & Hosono, H. (2016). Electric field-induced superconducting transition of insulating FeSe thin film at 35 K. Proceedings of the National Academy of Sciences of the United States of America, 113(15), 3986-90. https://doi.org/10.1073/pnas.1520810113
Hanzawa, Kota, et al. "Electric field-induced superconducting transition of insulating FeSe thin film at 35 K." Proceedings of the National Academy of Sciences of the United States of America vol. 113,15 (2016): 3986-90. doi: https://doi.org/10.1073/pnas.1520810113
Hanzawa K, Sato H, Hiramatsu H, Kamiya T, Hosono H. Electric field-induced superconducting transition of insulating FeSe thin film at 35 K. Proc Natl Acad Sci U S A. 2016 Apr 12;113(15):3986-90. doi: 10.1073/pnas.1520810113. Epub 2016 Mar 28. PMID: 27035956; PMCID: PMC4839426.
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Proc Natl Acad Sci U S A. 2016 Apr 12;113(15):3986-90. doi: 10.1073/pnas.1520810113. Epub 2016 Mar 28.

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K.

Proceedings of the National Academy of Sciences of the United States of America

Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Affiliations

  1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan;
  2. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan [email protected] [email protected].
  3. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan.

PMID: 27035956 PMCID: PMC4839426 DOI: 10.1073/pnas.1520810113

Abstract

It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double-layer transistor (EDLT) with an ionic liquid gate insulator enables such a field-induced transition to be investigated and is expected to result in a high Tc because it is free from deterioration in structure and carrier transport that are in general caused by conventional carrier doping (e.g., chemical substitution). Here, for insulating epitaxial thin films (∼10 nm thick) of FeSe, we report a high Tc of 35 K, which is 4× higher than that of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V. Hall effect measurements under the gate bias suggest that highly accumulated electron carrier in the channel, whose area density is estimated to be 1.4 × 10(15) cm(-2) (the average volume density of 1.7 × 10(21) cm(-3)), is the origin of the high-Tc superconductivity. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials.

Keywords: electric double-layer transistor; high-density carrier accumulation; iron-based superconductors

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