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Cavalli A, Wang J, Esmaeil Zadeh I, et al. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires. Nano Lett. 2016;16(5):3071-7doi: 10.1021/acs.nanolett.6b00203.
Cavalli, A., Wang, J., Esmaeil Zadeh, I., Reimer, M. E., Verheijen, M. A., Soini, M., Plissard, S. R., Zwiller, V., Haverkort, J. E., & Bakkers, E. P. (2016). High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires. Nano letters, 16(5), 3071-7. https://doi.org/10.1021/acs.nanolett.6b00203
Cavalli, Alessandro, et al. "High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires." Nano letters vol. 16,5 (2016): 3071-7. doi: https://doi.org/10.1021/acs.nanolett.6b00203
Cavalli A, Wang J, Esmaeil Zadeh I, Reimer ME, Verheijen MA, Soini M, Plissard SR, Zwiller V, Haverkort JE, Bakkers EP. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires. Nano Lett. 2016 May 11;16(5):3071-7. doi: 10.1021/acs.nanolett.6b00203. Epub 2016 Apr 12. PMID: 27045232.
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Nano Lett. 2016 May 11;16(5):3071-7. doi: 10.1021/acs.nanolett.6b00203. Epub 2016 Apr 12.

High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

Nano letters

Alessandro Cavalli, Jia Wang, Iman Esmaeil Zadeh, Michael E Reimer, Marcel A Verheijen, Martin Soini, Sebastien R Plissard, Val Zwiller, Jos E M Haverkort, Erik P A M Bakkers

Affiliations

  1. Department of Applied Physics, Eindhoven University of Technology , 5600 MB Eindhoven, The Netherlands.
  2. Kavli Institute of Nanoscience, Delft University of Technology , 2628 CJ Delft, The Netherlands.
  3. Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo , Waterloo, N2L 3G1, Canada.
  4. Philips Innovation Services Eindhoven , 5656 AE Eindhoven, The Netherlands.
  5. CNRS-Laboratoire d'Analyse et d'Architecture des Systemes (LAAS), Université de Toulouse , 7 avenue du colonel Roche, F-31400 Toulouse, France.
  6. Department of Applied Physics, Royal Institute of Technology (KTH) , 114 28 Stockholm, Sweden.

PMID: 27045232 DOI: 10.1021/acs.nanolett.6b00203

Abstract

Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.

Keywords: 100; Nanowire; diode; indium phosphide; p−n junction

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