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Saunders DJ, Munns JH, Champion TF, et al. Cavity-Enhanced Room-Temperature Broadband Raman Memory. Phys Rev Lett. 2016;116(9):090501doi: 10.1103/PhysRevLett.116.090501.
Saunders, D. J., Munns, J. H., Champion, T. F., Qiu, C., Kaczmarek, K. T., Poem, E., Ledingham, P. M., Walmsley, I. A., & Nunn, J. (2016). Cavity-Enhanced Room-Temperature Broadband Raman Memory. Physical review letters, 116(9), 090501. https://doi.org/10.1103/PhysRevLett.116.090501
Saunders, D J, et al. "Cavity-Enhanced Room-Temperature Broadband Raman Memory." Physical review letters vol. 116,9 (2016): 090501. doi: https://doi.org/10.1103/PhysRevLett.116.090501
Saunders DJ, Munns JH, Champion TF, Qiu C, Kaczmarek KT, Poem E, Ledingham PM, Walmsley IA, Nunn J. Cavity-Enhanced Room-Temperature Broadband Raman Memory. Phys Rev Lett. 2016 Mar 04;116(9):090501. doi: 10.1103/PhysRevLett.116.090501. Epub 2016 Mar 03. PMID: 26991164.
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Phys Rev Lett. 2016 Mar 04;116(9):090501. doi: 10.1103/PhysRevLett.116.090501. Epub 2016 Mar 03.

Cavity-Enhanced Room-Temperature Broadband Raman Memory.

Physical review letters

D J Saunders, J H D Munns, T F M Champion, C Qiu, K T Kaczmarek, E Poem, P M Ledingham, I A Walmsley, J Nunn

Affiliations

  1. Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
  2. QOLS, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom.
  3. Department of Physics, Quantum Institute for Light and Atoms, State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, People's Republic of China.

PMID: 26991164 DOI: 10.1103/PhysRevLett.116.090501

Abstract

Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali-vapor Raman memories combine high-bandwidth storage, on-demand readout, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and have suffered from four-wave-mixing noise. Here, we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering antiresonance for the anti-Stokes field, we also suppress the four-wave-mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapor memory, (15±2)×10^{-3} photons per pulse, with a total efficiency of (9.5±0.5)%.

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