Display options
Cite
Kumamoto A, Shibata N, Nayuki K, et al. Atomic structures of a liquid-phase bonded metal/nitride heterointerface. Sci Rep. 2016;6:22936doi: 10.1038/srep22936.
Kumamoto, A., Shibata, N., Nayuki, K., Tohei, T., Terasaki, N., Nagatomo, Y., Nagase, T., Akiyama, K., Kuromitsu, Y., & Ikuhara, Y. (2016). Atomic structures of a liquid-phase bonded metal/nitride heterointerface. Scientific reports, 622936. https://doi.org/10.1038/srep22936
Kumamoto, Akihito, et al. "Atomic structures of a liquid-phase bonded metal/nitride heterointerface." Scientific reports vol. 6 (2016): 22936. doi: https://doi.org/10.1038/srep22936
Kumamoto A, Shibata N, Nayuki K, Tohei T, Terasaki N, Nagatomo Y, Nagase T, Akiyama K, Kuromitsu Y, Ikuhara Y. Atomic structures of a liquid-phase bonded metal/nitride heterointerface. Sci Rep. 2016 Mar 10;6:22936. doi: 10.1038/srep22936. PMID: 26961157; PMCID: PMC4785497.
Copy Download .nbib Format: NLM
Share it on

Sci Rep. 2016 Mar 10;6:22936. doi: 10.1038/srep22936.

Atomic structures of a liquid-phase bonded metal/nitride heterointerface.

Scientific reports

Akihito Kumamoto, Naoya Shibata, Kei-Ichiro Nayuki, Tetsuya Tohei, Nobuyuki Terasaki, Yoshiyuki Nagatomo, Toshiyuki Nagase, Kazuhiro Akiyama, Yoshirou Kuromitsu, Yuichi Ikuhara

Affiliations

  1. Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
  2. Central Research Institute, Mitsubishi Materials Corp., Naka, Ibaraki 311-0102, Japan.

PMID: 26961157 PMCID: PMC4785497 DOI: 10.1038/srep22936

Abstract

Liquid-phase bonding is a technologically important method to fabricate high-performance metal/ceramic heterostructures used for power electronic devices. However, the atomic-scale mechanisms of how these two dissimilar crystals specifically bond at the interfaces are still not well understood. Here we analyse the atomically-resolved structure of a liquid-phase bonded heterointerface between Al alloy and AlN single crystal using aberration corrected scanning transmission electron microscopy (STEM). In addition, energy-dispersive X-ray microanalysis, using dual silicon drift X-ray detectors in STEM, was performed to analyze the local chemistry of the interface. We find that a monolayer of MgO is spontaneously formed on the AlN substrate surface and that a polarity-inverted monolayer of AlN is grown on top of it. Thus, the Al alloy is bonded with the polarity-inverted AlN monolayer, creating a complex atomic-scale layered structure, facilitating the bonding between the two dissimilar crystals during liquid-phase bonding processes. Density-functional-theory calculations confirm that the bonding stability is strongly dependent on the polarity and stacking of AlN and MgO monolayers. Understanding the spontaneous formation of layered transition structures at the heterointerface will be key in fabricating very stable Al alloy/AlN heterointerface required for high reliability power electronic devices.

References

  1. J Phys Condens Matter. 2008 Jul 2;20(26):264013 - PubMed
  2. Science. 2005 Oct 28;310(5748):661-3 - PubMed
  3. Phys Rev Lett. 1996 Oct 28;77(18):3865-3868 - PubMed
  4. Science. 2004 Dec 3;306(5702):1768-70 - PubMed
  5. Ultramicroscopy. 2015 Apr;151:150-9 - PubMed
  6. Microsc Res Tech. 1998 Feb 1;40(3):206-41 - PubMed
  7. Nature. 2004 Apr 15;428(6984):730-3 - PubMed
  8. Rev Sci Instrum. 2009 Jan;80(1):013901 - PubMed
  9. Phys Rev B Condens Matter. 1996 Oct 15;54(16):11169-11186 - PubMed

Publication Types