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Phys Rev Lett. 2016 Apr 22;116(16):166802. doi: 10.1103/PhysRevLett.116.166802. Epub 2016 Apr 22.

Probing Quantum Capacitance in a 3D Topological Insulator.

Physical review letters

D A Kozlov, D Bauer, J Ziegler, R Fischer, M L Savchenko, Z D Kvon, N N Mikhailov, S A Dvoretsky, D Weiss

Affiliations

  1. A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
  2. Novosibirsk State University, Novosibirsk 630090, Russia.
  3. Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany.

PMID: 27152818 DOI: 10.1103/PhysRevLett.116.166802

Abstract

We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magnetocapacitance oscillations probe-in contrast to magnetotransport-primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.

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