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Heilmann M, Munshi AM, Sarau G, et al. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer. Nano Lett. 2016;16(6):3524-32doi: 10.1021/acs.nanolett.6b00484.
Heilmann, M., Munshi, A. M., Sarau, G., Göbelt, M., Tessarek, C., Fauske, V. T., van Helvoort, A. T., Yang, J., Latzel, M., Hoffmann, B., Conibeer, G., Weman, H., & Christiansen, S. (2016). Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer. Nano letters, 16(6), 3524-32. https://doi.org/10.1021/acs.nanolett.6b00484
Heilmann, Martin, et al. "Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer." Nano letters vol. 16,6 (2016): 3524-32. doi: https://doi.org/10.1021/acs.nanolett.6b00484
Heilmann M, Munshi AM, Sarau G, Göbelt M, Tessarek C, Fauske VT, van Helvoort AT, Yang J, Latzel M, Hoffmann B, Conibeer G, Weman H, Christiansen S. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer. Nano Lett. 2016 Jun 08;16(6):3524-32. doi: 10.1021/acs.nanolett.6b00484. Epub 2016 May 03. PMID: 27124605.
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Nano Lett. 2016 Jun 08;16(6):3524-32. doi: 10.1021/acs.nanolett.6b00484. Epub 2016 May 03.

Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

Nano letters

Martin Heilmann, A Mazid Munshi, George Sarau, Manuela Göbelt, Christian Tessarek, Vidar T Fauske, Antonius T J van Helvoort, Jianfeng Yang, Michael Latzel, Björn Hoffmann, Gavin Conibeer, Helge Weman, Silke Christiansen

Affiliations

  1. Max Planck Institute for the Science of Light , Günther-Scharowsky-Str. 1, D-91058 Erlangen, Germany.
  2. CrayoNano AS , Otto Nielsens vei 12, NO-7052 Trondheim, Norway.
  3. Institut für Nanoarchitekturen für die Energieumwandlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Hahn-Meitner Platz 1, D-14109 Berlin, Germany.
  4. Institute of Optics, Information and Photonics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) , Staudtstr. 7/B2, D-91058 Erlangen, Germany.
  5. Department of Physics, Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim, Norway.
  6. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales , Kensington, Sydney, New South Wales 2052, Australia.
  7. Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim, Norway.
  8. Physics Department, Freie Universität Berlin , Arnimallee 14, D-14195 Berlin, Germany.

PMID: 27124605 DOI: 10.1021/acs.nanolett.6b00484

Abstract

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

Keywords: GaN; GaN-on-Si; MOVPE; graphene; nanorods

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