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Dadlani AL, Acharya S, Trejo O, et al. ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS. ACS Appl Mater Interfaces. 2016;8(23):14323-7doi: 10.1021/acsami.6b04000.
Dadlani, A. L., Acharya, S., Trejo, O., Prinz, F. B., & Torgersen, J. (2016). ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS. ACS applied materials & interfaces, 8(23), 14323-7. https://doi.org/10.1021/acsami.6b04000
Dadlani, Anup L, et al. "ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS." ACS applied materials & interfaces vol. 8,23 (2016): 14323-7. doi: https://doi.org/10.1021/acsami.6b04000
Dadlani AL, Acharya S, Trejo O, Prinz FB, Torgersen J. ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS. ACS Appl Mater Interfaces. 2016 Jun 15;8(23):14323-7. doi: 10.1021/acsami.6b04000. Epub 2016 May 31. PMID: 27223620; PMCID: PMC4911619.
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ACS Appl Mater Interfaces. 2016 Jun 15;8(23):14323-7. doi: 10.1021/acsami.6b04000. Epub 2016 May 31.

ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS.

ACS applied materials & interfaces

Anup L Dadlani, Shinjita Acharya, Orlando Trejo, Fritz B Prinz, Jan Torgersen

Affiliations

  1. Department of Chemistry, ‡Department of Mechanical Engineering, and §Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.

PMID: 27223620 PMCID: PMC4911619 DOI: 10.1021/acsami.6b04000

Abstract

The ability to precisely control interfaces of atomic layer deposited (ALD) zinc oxysulfide (Zn(O,S)) buffer layers to other layers allows precise tuning of solar cell performance. The O K- and S K-edge X-ray absorption near edge structure (XANES) of ∼2-4 nm thin Zn(O,S) films reveals the chemical and structural influences of their interface with ZnO, a common electrode material and diffusion barrier in solar cells. We observe that sulfate formation at oxide/sulfide interfaces is independent of film composition, a result of sulfur diffusion toward interfaces. Leveraging sulfur's diffusivity, we propose an alternative ALD process in which the zinc precursor pulse is bypassed during H2S exposure. Such a process yields similar results to the nanolaminate deposition method and highlights mechanistic differences between ALD sulfides and oxides. By identifying chemical species and structural evolution at sulfide/oxide interfaces, this work provides insights into increasing thin film solar cell efficiencies.

Keywords: X-ray absorption near edge structure (XANES); Zn(O,S); atomic layer deposition (ALD); electronic structure; ternary oxide films

References

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