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Lv YY, Zhang BB, Li X, et al. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals. Sci Rep. 2016;6:26903doi: 10.1038/srep26903.
Lv, Y. Y., Zhang, B. B., Li, X., Pang, B., Zhang, F., Lin, D. J., Zhou, J., Yao, S. H., Chen, Y. B., Zhang, S. T., Lu, M., Liu, Z., Chen, Y., & Chen, Y. F. (2016). Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals. Scientific reports, 626903. https://doi.org/10.1038/srep26903
Lv, Yang-Yang, et al. "Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals." Scientific reports vol. 6 (2016): 26903. doi: https://doi.org/10.1038/srep26903
Lv YY, Zhang BB, Li X, Pang B, Zhang F, Lin DJ, Zhou J, Yao SH, Chen YB, Zhang ST, Lu M, Liu Z, Chen Y, Chen YF. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals. Sci Rep. 2016 May 27;6:26903. doi: 10.1038/srep26903. PMID: 27228908; PMCID: PMC4882502.
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Sci Rep. 2016 May 27;6:26903. doi: 10.1038/srep26903.

Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

Scientific reports

Yang-Yang Lv, Bin-Bin Zhang, Xiao Li, Bin Pang, Fan Zhang, Da-Jun Lin, Jian Zhou, Shu-Hua Yao, Y B Chen, Shan-Tao Zhang, Minghui Lu, Zhongkai Liu, Yulin Chen, Yan-Feng Chen

Affiliations

  1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China.
  2. National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093, China.
  3. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China.
  4. State Key Laboratory of Low Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter and Department of Physics, Tsinghua University, Beijing 100084, China.
  5. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

PMID: 27228908 PMCID: PMC4882502 DOI: 10.1038/srep26903

Abstract

Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

References

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