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Choi MS, Park HM, Joo KN. Note: Near infrared interferometric silicon wafer metrology. Rev Sci Instrum. 2016;87(4):046106doi: 10.1063/1.4948292.
Choi, M. S., Park, H. M., & Joo, K. N. (2016). Note: Near infrared interferometric silicon wafer metrology. The Review of scientific instruments, 87(4), 046106. https://doi.org/10.1063/1.4948292
Choi, M S, et al. "Note: Near infrared interferometric silicon wafer metrology." The Review of scientific instruments vol. 87,4 (2016): 046106. doi: https://doi.org/10.1063/1.4948292
Choi MS, Park HM, Joo KN. Note: Near infrared interferometric silicon wafer metrology. Rev Sci Instrum. 2016 Apr;87(4):046106. doi: 10.1063/1.4948292. PMID: 27131722.
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Rev Sci Instrum. 2016 Apr;87(4):046106. doi: 10.1063/1.4948292.

Note: Near infrared interferometric silicon wafer metrology.

The Review of scientific instruments

M S Choi, H M Park, K N Joo

Affiliations

  1. Department of Photonic Engineering, Chosun University, Gwangju 61452, South Korea.

PMID: 27131722 DOI: 10.1063/1.4948292

Abstract

In this investigation, two near infrared (NIR) interferometric techniques for silicon wafer metrology are described and verified with experimental results. Based on the transparent characteristic of NIR light to a silicon wafer, the fiber based spectrally resolved interferometry can measure the optical thickness of the wafer and stitching low coherence scanning interferometry can reconstruct entire surfaces of the wafer.

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