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Nouman MT, Kim HW, Woo JM, et al. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors. Sci Rep. 2016;6:26452doi: 10.1038/srep26452.
Nouman, M. T., Kim, H. W., Woo, J. M., Hwang, J. H., Kim, D., & Jang, J. H. (2016). Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors. Scientific reports, 626452. https://doi.org/10.1038/srep26452
Nouman, Muhammad Tayyab, et al. "Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors." Scientific reports vol. 6 (2016): 26452. doi: https://doi.org/10.1038/srep26452
Nouman MT, Kim HW, Woo JM, Hwang JH, Kim D, Jang JH. Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors. Sci Rep. 2016 May 19;6:26452. doi: 10.1038/srep26452. PMID: 27194128; PMCID: PMC4872220.
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Sci Rep. 2016 May 19;6:26452. doi: 10.1038/srep26452.

Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

Scientific reports

Muhammad Tayyab Nouman, Hyun-Woong Kim, Jeong Min Woo, Ji Hyun Hwang, Dongju Kim, Jae-Hyung Jang

Affiliations

  1. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, 1 Oryongdong Buk-gu, Gwangju 500-712, South Korea.

PMID: 27194128 PMCID: PMC4872220 DOI: 10.1038/srep26452

Abstract

The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.

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