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Lehmann H, Willing S, Möller S, et al. Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles. Nanoscale. 2016;8(30):14384-92doi: 10.1039/c6nr02489k.
Lehmann, H., Willing, S., Möller, S., Volkmann, M., & Klinke, C. (2016). Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles. Nanoscale, 8(30), 14384-92. https://doi.org/10.1039/c6nr02489k
Lehmann, Hauke, et al. "Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles." Nanoscale vol. 8,30 (2016): 14384-92. doi: https://doi.org/10.1039/c6nr02489k
Lehmann H, Willing S, Möller S, Volkmann M, Klinke C. Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles. Nanoscale. 2016 Aug 14;8(30):14384-92. doi: 10.1039/c6nr02489k. Epub 2016 May 27. PMID: 27232949.
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