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Glaser M, Kitzler A, Johannes A, et al. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures. Nano Lett. 2016;16(6):3507-13doi: 10.1021/acs.nanolett.6b00315.
Glaser, M., Kitzler, A., Johannes, A., Prucnal, S., Potts, H., Conesa-Boj, S., Filipovic, L., Kosina, H., Skorupa, W., Bertagnolli, E., Ronning, C., Fontcuberta I Morral, A., & Lugstein, A. (2016). Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures. Nano letters, 16(6), 3507-13. https://doi.org/10.1021/acs.nanolett.6b00315
Glaser, Markus, et al. "Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures." Nano letters vol. 16,6 (2016): 3507-13. doi: https://doi.org/10.1021/acs.nanolett.6b00315
Glaser M, Kitzler A, Johannes A, Prucnal S, Potts H, Conesa-Boj S, Filipovic L, Kosina H, Skorupa W, Bertagnolli E, Ronning C, Fontcuberta I Morral A, Lugstein A. Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures. Nano Lett. 2016 Jun 08;16(6):3507-13. doi: 10.1021/acs.nanolett.6b00315. Epub 2016 May 13. PMID: 27168031; PMCID: PMC4901366.
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Nano Lett. 2016 Jun 08;16(6):3507-13. doi: 10.1021/acs.nanolett.6b00315. Epub 2016 May 13.

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures.

Nano letters

Markus Glaser, Andreas Kitzler, Andreas Johannes, Slawomir Prucnal, Heidi Potts, Sonia Conesa-Boj, Lidija Filipovic, Hans Kosina, Wolfgang Skorupa, Emmerich Bertagnolli, Carsten Ronning, Anna Fontcuberta I Morral, Alois Lugstein

Affiliations

  1. Institute of Solid State Electronics, TU Wien , Floragasse 7, 1040 Wien, Austria.
  2. Institute for Solid State Physics, Friedrich-Schiller-University Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
  3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf , Bautzner Landstraße 400, 01328 Dresden, Germany.
  4. Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.
  5. Institute for Microelectronics, TU Wien , Gußhausstraße 25-29, 1040 Wien, Austria.

PMID: 27168031 PMCID: PMC4901366 DOI: 10.1021/acs.nanolett.6b00315

Abstract

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.

Keywords: GaAs; Nanowires; Schottky; Si; electroluminescence; heterostructures

References

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