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Kumar N, Kitoh A, Inoue IH. Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface. Sci Rep. 2016;6:25789doi: 10.1038/srep25789.
Kumar, N., Kitoh, A., & Inoue, I. H. (2016). Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface. Scientific reports, 625789. https://doi.org/10.1038/srep25789
Kumar, Neeraj, et al. "Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface." Scientific reports vol. 6 (2016): 25789. doi: https://doi.org/10.1038/srep25789
Kumar N, Kitoh A, Inoue IH. Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface. Sci Rep. 2016 May 12;6:25789. doi: 10.1038/srep25789. PMID: 27174141; PMCID: PMC4865841.
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Sci Rep. 2016 May 12;6:25789. doi: 10.1038/srep25789.

Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO3 surface.

Scientific reports

Neeraj Kumar, Ai Kitoh, Isao H Inoue

Affiliations

  1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.

PMID: 27174141 PMCID: PMC4865841 DOI: 10.1038/srep25789

Abstract

Electrostatic carrier accumulation on an insulating (100) surface of SrTiO3 by fabricating a field effect transistor with Parylene-C (6 nm)/HfO2 (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density is about 10 times as large as ( is the sheet capacitance of the gate insulator, VG is the gate voltage, and e is the elementary charge). The channel is so clean to exhibit small subthreshod swing of 170 mV/decade and large mobility of 11 cm(2)/Vs for of 1 × 10(14) cm(-2) at room temperature. Since does not depend on either VG nor time duration, beyond is solely ascribed to negative charge compressibility of the carriers, which was in general considered as due to exchange interactions among electrons in the small limit. However, the observed is too large to be naively understood by the framework. Alternative ideas are proposed in this work.

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