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Lo CT, Watanabe Y, Oya H, et al. Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles. Chem Commun (Camb). 2016;52(45):7269-72doi: 10.1039/c6cc02750d.
Lo, C. T., Watanabe, Y., Oya, H., Nakabayashi, K., Mori, H., & Chen, W. C. (2016). Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles. Chemical communications (Cambridge, England), 52(45), 7269-72. https://doi.org/10.1039/c6cc02750d
Lo, Chen-Tsyr, et al. "Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles." Chemical communications (Cambridge, England) vol. 52,45 (2016): 7269-72. doi: https://doi.org/10.1039/c6cc02750d
Lo CT, Watanabe Y, Oya H, Nakabayashi K, Mori H, Chen WC. Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles. Chem Commun (Camb). 2016 Jun 07;52(45):7269-72. doi: 10.1039/c6cc02750d. Epub 2016 May 16. PMID: 27180874.
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Chem Commun (Camb). 2016 Jun 07;52(45):7269-72. doi: 10.1039/c6cc02750d. Epub 2016 May 16.

Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles.

Chemical communications (Cambridge, England)

Chen-Tsyr Lo, Yu Watanabe, Hiroshi Oya, Kazuhiro Nakabayashi, Hideharu Mori, Wen-Chang Chen

Affiliations

  1. Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan. [email protected].

PMID: 27180874 DOI: 10.1039/c6cc02750d

Abstract

Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.

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