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Edmonds MT, Hellerstedt J, O'Donnell KM, et al. Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ. ACS Appl Mater Interfaces. 2016;8(25):16412-8doi: 10.1021/acsami.6b03312.
Edmonds, M. T., Hellerstedt, J., O'Donnell, K. M., Tadich, A., & Fuhrer, M. S. (2016). Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ. ACS applied materials & interfaces, 8(25), 16412-8. https://doi.org/10.1021/acsami.6b03312
Edmonds, Mark T, et al. "Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ." ACS applied materials & interfaces vol. 8,25 (2016): 16412-8. doi: https://doi.org/10.1021/acsami.6b03312
Edmonds MT, Hellerstedt J, O'Donnell KM, Tadich A, Fuhrer MS. Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ. ACS Appl Mater Interfaces. 2016 Jun 29;8(25):16412-8. doi: 10.1021/acsami.6b03312. Epub 2016 Jun 16. PMID: 27309858.
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ACS Appl Mater Interfaces. 2016 Jun 29;8(25):16412-8. doi: 10.1021/acsami.6b03312. Epub 2016 Jun 16.

Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ.

ACS applied materials & interfaces

Mark T Edmonds, Jack Hellerstedt, Kane M O'Donnell, Anton Tadich, Michael S Fuhrer

Affiliations

  1. School of Physics and Astronomy and Monash Centre for Atomically Thin Materials, Clayton Victoria 3800, Australia.
  2. Department of Imaging and Applied Physics, Curtin University , Bentley, Western Australia 6102, Australia.
  3. Australian Synchrotron , 700 Blackburn Road, Clayton, Victoria 3168, Australia.

PMID: 27309858 DOI: 10.1021/acsami.6b03312

Abstract

We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10(13) cm(-2) of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10(12) cm(-2)), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.

Keywords: Na3Bi; surface transfer doping; thin film; topological Dirac semimetal

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