Cite
Sun S, Mu W, Edwards M, et al. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects. Nanotechnology. 2016;27(33):335705doi: 10.1088/0957-4484/27/33/335705.
Sun, S., Mu, W., Edwards, M., Mencarelli, D., Pierantoni, L., Fu, Y., Jeppson, K., & Liu, J. (2016). Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects. Nanotechnology, 27(33), 335705. https://doi.org/10.1088/0957-4484/27/33/335705
Sun, Shuangxi, et al. "Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects." Nanotechnology vol. 27,33 (2016): 335705. doi: https://doi.org/10.1088/0957-4484/27/33/335705
Sun S, Mu W, Edwards M, Mencarelli D, Pierantoni L, Fu Y, Jeppson K, Liu J. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects. Nanotechnology. 2016 Aug 19;27(33):335705. doi: 10.1088/0957-4484/27/33/335705. Epub 2016 Jul 07. PMID: 27383767.
Copy
Download .nbib