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Ewert M, Schmidt T, Flege JI, et al. Morphology and chemical composition of cobalt germanide islands on Ge(001). Nanotechnology. 2016;27(32):325705doi: 10.1088/0957-4484/27/32/325705.
Ewert, M., Schmidt, T., Flege, J. I., Heidmann, I., Grzela, T., Klesse, W. M., Foerster, M., Aballe, L., Schroeder, T., & Falta, J. (2016). Morphology and chemical composition of cobalt germanide islands on Ge(001). Nanotechnology, 27(32), 325705. https://doi.org/10.1088/0957-4484/27/32/325705
Ewert, M, et al. "Morphology and chemical composition of cobalt germanide islands on Ge(001)." Nanotechnology vol. 27,32 (2016): 325705. doi: https://doi.org/10.1088/0957-4484/27/32/325705
Ewert M, Schmidt T, Flege JI, Heidmann I, Grzela T, Klesse WM, Foerster M, Aballe L, Schroeder T, Falta J. Morphology and chemical composition of cobalt germanide islands on Ge(001). Nanotechnology. 2016 Aug 12;27(32):325705. doi: 10.1088/0957-4484/27/32/325705. Epub 2016 Jun 27. PMID: 27348504.
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Nanotechnology. 2016 Aug 12;27(32):325705. doi: 10.1088/0957-4484/27/32/325705. Epub 2016 Jun 27.

Morphology and chemical composition of cobalt germanide islands on Ge(001).

Nanotechnology

M Ewert, Th Schmidt, J I Flege, I Heidmann, T Grzela, W M Klesse, M Foerster, L Aballe, T Schroeder, J Falta

Affiliations

  1. Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany.

PMID: 27348504 DOI: 10.1088/0957-4484/27/32/325705

Abstract

The reactive growth of cobalt germanide on Ge(001) was investigated by means of in situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction (μ-LEED), and ex situ atomic force microscopy (AFM). At a Co deposition temperature of 670 °C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. By combining XAS-PEEM and μ-LEED, we were able to identify a large part of the islands to consist of CoGe2, with many of them having an unusual epitaxial relationship: CoGe2 [Formula: see text] [Formula: see text] Ge [Formula: see text]. Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co5Ge7 and CoGe. Comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates, the occurrence of these intermediate phases seems to be promoted by defects or residual strain.

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