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Lee AR, Baek GH, Kim TY, et al. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames. Sci Rep. 2016;6:30333doi: 10.1038/srep30333.
Lee, A. R., Baek, G. H., Kim, T. Y., Ko, W. B., Yang, S. M., Kim, J., Im, H. S., & Hong, J. P. (2016). Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames. Scientific reports, 630333. https://doi.org/10.1038/srep30333
Lee, Ah Rahm, et al. "Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames." Scientific reports vol. 6 (2016): 30333. doi: https://doi.org/10.1038/srep30333
Lee AR, Baek GH, Kim TY, Ko WB, Yang SM, Kim J, Im HS, Hong JP. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames. Sci Rep. 2016 Jul 25;6:30333. doi: 10.1038/srep30333. PMID: 27451943; PMCID: PMC4958974.
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Sci Rep. 2016 Jul 25;6:30333. doi: 10.1038/srep30333.

Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames.

Scientific reports

Ah Rahm Lee, Gwang Ho Baek, Tae Yoon Kim, Won Bae Ko, Seung Mo Yang, Jongmin Kim, Hyun Sik Im, Jin Pyo Hong

Affiliations

  1. Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea.
  2. Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791, South Korea.
  3. Department of Semiconductor Science, Dongguk University, Seoul, 100-715, South Korea.

PMID: 27451943 PMCID: PMC4958974 DOI: 10.1038/srep30333

Abstract

Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5-x/Ta/Ta2O5-x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5-x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.

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