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Hussain S, Singh J, Vikraman D, et al. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method. Sci Rep. 2016;6:30791doi: 10.1038/srep30791.
Hussain, S., Singh, J., Vikraman, D., Singh, A. K., Iqbal, M. Z., Khan, M. F., Kumar, P., Choi, D. C., Song, W., An, K. S., Eom, J., Lee, W. G., & Jung, J. (2016). Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method. Scientific reports, 630791. https://doi.org/10.1038/srep30791
Hussain, Sajjad, et al. "Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method." Scientific reports vol. 6 (2016): 30791. doi: https://doi.org/10.1038/srep30791
Hussain S, Singh J, Vikraman D, Singh AK, Iqbal MZ, Khan MF, Kumar P, Choi DC, Song W, An KS, Eom J, Lee WG, Jung J. Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method. Sci Rep. 2016 Aug 05;6:30791. doi: 10.1038/srep30791. PMID: 27492282; PMCID: PMC4974610.
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Sci Rep. 2016 Aug 05;6:30791. doi: 10.1038/srep30791.

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method.

Scientific reports

Sajjad Hussain, Jai Singh, Dhanasekaran Vikraman, Arun Kumar Singh, Muhammad Zahir Iqbal, Muhammad Farooq Khan, Pushpendra Kumar, Dong-Chul Choi, Wooseok Song, Ki-Seok An, Jonghwa Eom, Wan-Gyu Lee, Jongwan Jung

Affiliations

  1. Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  2. Faculty of Nanotechnology &Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  3. Dr. H. S. Gour Central University, Sagar, M.P. 470003, India.
  4. Division of Energy Systems Research, Ajou University, Suwon 443-749, Republic of Korea.
  5. Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  6. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan.
  7. Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Daejon 305-600, Korea.
  8. National Nano Fab Center, Daejeon, Korea.

PMID: 27492282 PMCID: PMC4974610 DOI: 10.1038/srep30791

Abstract

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm(2)/Vs and current on/off ratio on the order of ~10(4) were obtained for bilayer MoS2. The mobility increased up to ~173-181 cm(2)/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film.

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