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Di Paola DM, Kesaria M, Makarovsky O, et al. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Sci Rep. 2016;6:32039doi: 10.1038/srep32039.
Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A., Eaves, L., Mori, N., Krier, A., & Patanè, A. (2016). Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific reports, 632039. https://doi.org/10.1038/srep32039
Di Paola, D M, et al. "Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode." Scientific reports vol. 6 (2016): 32039. doi: https://doi.org/10.1038/srep32039
Di Paola DM, Kesaria M, Makarovsky O, Velichko A, Eaves L, Mori N, Krier A, Patanè A. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Sci Rep. 2016 Aug 18;6:32039. doi: 10.1038/srep32039. PMID: 27535896; PMCID: PMC4989182.
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Sci Rep. 2016 Aug 18;6:32039. doi: 10.1038/srep32039.

Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode.

Scientific reports

D M Di Paola, M Kesaria, O Makarovsky, A Velichko, L Eaves, N Mori, A Krier, A Patanè

Affiliations

  1. School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UK.
  2. Physics Department, Lancaster University, Lancaster LA1 4YB, UK.
  3. Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita City, Osaka 565-0871, Japan.

PMID: 27535896 PMCID: PMC4989182 DOI: 10.1038/srep32039

Abstract

Interband tunnelling of carriers through a forbidden energy gap, known as Zener tunnelling, is a phenomenon of fundamental and technological interest. Its experimental observation in the Esaki p-n semiconductor diode has led to the first demonstration and exploitation of quantum tunnelling in a condensed matter system. Here we demonstrate a new type of Zener tunnelling that involves the resonant transmission of electrons through zero-dimensional (0D) states. In our devices, a narrow quantum well of the mid-infrared (MIR) alloy In(AsN) is placed in the intrinsic (i) layer of a p-i-n diode. The incorporation of nitrogen in the quantum well creates 0D states that are localized on nanometer lengthscales. These levels provide intermediate states that act as "stepping stones" for electrons tunnelling across the diode and give rise to a negative differential resistance (NDR) that is weakly dependent on temperature. These electron transport properties have potential for the development of nanometre-scale non-linear components for electronics and MIR photonics.

References

  1. Science. 2000 Oct 6;290(5489):122-4 - PubMed
  2. Nat Commun. 2012;3:1097 - PubMed
  3. Phys Rev Lett. 2004 Nov 5;93(19):196402 - PubMed
  4. Nature. 2011 Nov 16;479(7373):317-23 - PubMed
  5. Proc Jpn Acad Ser B Phys Biol Sci. 2010;86(4):451-3 - PubMed
  6. Nature. 2016 Mar 10;531(7593):206-9 - PubMed
  7. Phys Rev Lett. 1994 Mar 7;72(10):1490-1493 - PubMed
  8. Phys Rev B Condens Matter. 1993 Aug 15;48(8):5664-5667 - PubMed
  9. Phys Rev Lett. 2010 Dec 3;105(23):236804 - PubMed
  10. Phys Rev B Condens Matter. 1994 Sep 15;50(12):8358-8377 - PubMed

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