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Lee JH, Pin MW, Choi SJ, et al. Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires. Nano Lett. 2016;16(11):6738-6745doi: 10.1021/acs.nanolett.6b02155.
Lee, J. H., Pin, M. W., Choi, S. J., Jo, M. H., Shin, J. C., Hong, S. G., Lee, S. M., Cho, B., Ahn, S. J., Song, N. W., Yi, S. H., & Kim, Y. H. (2016). Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires. Nano letters, 16(11), 6738-6745. https://doi.org/10.1021/acs.nanolett.6b02155
Lee, Jong Hoon, et al. "Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires." Nano letters vol. 16,11 (2016): 6738-6745. doi: https://doi.org/10.1021/acs.nanolett.6b02155
Lee JH, Pin MW, Choi SJ, Jo MH, Shin JC, Hong SG, Lee SM, Cho B, Ahn SJ, Song NW, Yi SH, Kim YH. Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires. Nano Lett. 2016 Nov 09;16(11):6738-6745. doi: 10.1021/acs.nanolett.6b02155. Epub 2016 Oct 07. PMID: 27704850.
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Nano Lett. 2016 Nov 09;16(11):6738-6745. doi: 10.1021/acs.nanolett.6b02155. Epub 2016 Oct 07.

Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires.

Nano letters

Jong Hoon Lee, Min Wook Pin, Su Ji Choi, Min Hyeok Jo, Jae Cheol Shin, Seong-Gu Hong, Seung Mi Lee, Boklae Cho, Sang Jung Ahn, Nam Woong Song, Seong-Hoon Yi, Young Heon Kim

Affiliations

  1. Korea Research Institute of Standards and Science , 267 Gajeong-Ro, Yuseong-Gu, Daejeon 34113, Republic of Korea.
  2. University of Science and Technology , 217 Gajeong-Ro, Yuseong-Gu, Daejeon 34113, Republic of Korea.
  3. Department of Materials Science and Metallurgical Engineering, Kyungpook National University , Daegu 41566, Republic of Korea.
  4. Department of Physics, Yeungnam University , Gyeongsan 38541, Republic of Korea.

PMID: 27704850 DOI: 10.1021/acs.nanolett.6b02155

Abstract

The electromechanical properties of ternary InAsP nanowires (NWs) were investigated by applying a uniaxial tensile strain in a transmission electron microscope (TEM). The electromechanical properties in our examined InAsP NWs were governed by the piezoresistive effect. We found that the electronic transport of the InAsP NWs is dominated by space-charge-limited transport, with a I ∞ V

Keywords: Indium arsenic phosphide (InAsP) nanowire; piezoresistance; transmission electron microscopy (TEM)

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