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Mitchson G, Hadland E, Göhler F, et al. Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe). ACS Nano. 2016;10(10):9489-9499doi: 10.1021/acsnano.6b04606.
Mitchson, G., Hadland, E., Göhler, F., Wanke, M., Esters, M., Ditto, J., Bigwood, E., Ta, K., Hennig, R. G., Seyller, T., & Johnson, D. C. (2016). Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe). ACS nano, 10(10), 9489-9499. https://doi.org/10.1021/acsnano.6b04606
Mitchson, Gavin, et al. "Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe)." ACS nano vol. 10,10 (2016): 9489-9499. doi: https://doi.org/10.1021/acsnano.6b04606
Mitchson G, Hadland E, Göhler F, Wanke M, Esters M, Ditto J, Bigwood E, Ta K, Hennig RG, Seyller T, Johnson DC. Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe). ACS Nano. 2016 Oct 25;10(10):9489-9499. doi: 10.1021/acsnano.6b04606. Epub 2016 Sep 28. PMID: 27673390.
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ACS Nano. 2016 Oct 25;10(10):9489-9499. doi: 10.1021/acsnano.6b04606. Epub 2016 Sep 28.

Structural Changes in 2D BiSe Bilayers as n Increases in (BiSe).

ACS nano

Gavin Mitchson, Erik Hadland, Fabian Göhler, Martina Wanke, Marco Esters, Jeffrey Ditto, Erik Bigwood, Kim Ta, Richard G Hennig, Thomas Seyller, David C Johnson

Affiliations

  1. Department of Chemistry, University of Oregon , Eugene, Oregon 97401, United States.
  2. Institut für Physik, Technische Universität Chemnitz , Reichenhainer Strasse 70, D-09126 Chemnitz, Germany.
  3. Department of Materials Science and Engineering, University of Florida , Gainesville, Florida 32611, United States.

PMID: 27673390 DOI: 10.1021/acsnano.6b04606

Abstract

(BiSe)

Keywords: charge transfer; electronic environment; electronic transport; heterostructures; two-dimensional materials

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