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Tedeschi D, De Luca M, Granados Del Águila A, et al. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires. Nano Lett. 2016;16(10):6213-6221doi: 10.1021/acs.nanolett.6b02469.
Tedeschi, D., De Luca, M., Granados Del Águila, A., Gao, Q., Ambrosio, G., Capizzi, M., Tan, H. H., Christianen, P. C., Jagadish, C., & Polimeni, A. (2016). Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires. Nano letters, 16(10), 6213-6221. https://doi.org/10.1021/acs.nanolett.6b02469
Tedeschi, D, et al. "Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires." Nano letters vol. 16,10 (2016): 6213-6221. doi: https://doi.org/10.1021/acs.nanolett.6b02469
Tedeschi D, De Luca M, Granados Del Águila A, Gao Q, Ambrosio G, Capizzi M, Tan HH, Christianen PC, Jagadish C, Polimeni A. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires. Nano Lett. 2016 Oct 12;16(10):6213-6221. doi: 10.1021/acs.nanolett.6b02469. Epub 2016 Sep 27. PMID: 27676609.
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Nano Lett. 2016 Oct 12;16(10):6213-6221. doi: 10.1021/acs.nanolett.6b02469. Epub 2016 Sep 27.

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires.

Nano letters

D Tedeschi, M De Luca, A Granados Del Águila, Q Gao, G Ambrosio, M Capizzi, H H Tan, P C M Christianen, C Jagadish, A Polimeni

Affiliations

  1. Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy.
  2. High Field Magnet Laboratory (HFML - EMFL), Radboud University , Toernooiveld 7, NL-6525 ED Nijmegen, The Netherlands.
  3. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia.

PMID: 27676609 DOI: 10.1021/acs.nanolett.6b02469

Abstract

The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m

Keywords: Wurtzite InP nanowires; carrier effective mass; excitons; impurity states; magneto-photoluminescence

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