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Yoo JH, Menor MG, Adams JJ, et al. Laser damage mechanisms in conductive widegap semiconductor films. Opt Express. 2016;24(16):17616-34doi: 10.1364/OE.24.017616.
Yoo, J. H., Menor, M. G., Adams, J. J., Raman, R. N., Lee, J. R., Olson, T. Y., Shen, N., Suh, J., Demos, S. G., Bude, J., & Elhadj, S. (2016). Laser damage mechanisms in conductive widegap semiconductor films. Optics express, 24(16), 17616-34. https://doi.org/10.1364/OE.24.017616
Yoo, Jae-Hyuck, et al. "Laser damage mechanisms in conductive widegap semiconductor films." Optics express vol. 24,16 (2016): 17616-34. doi: https://doi.org/10.1364/OE.24.017616
Yoo JH, Menor MG, Adams JJ, Raman RN, Lee JR, Olson TY, Shen N, Suh J, Demos SG, Bude J, Elhadj S. Laser damage mechanisms in conductive widegap semiconductor films. Opt Express. 2016 Aug 08;24(16):17616-34. doi: 10.1364/OE.24.017616. PMID: 27505731.
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Opt Express. 2016 Aug 08;24(16):17616-34. doi: 10.1364/OE.24.017616.

Laser damage mechanisms in conductive widegap semiconductor films.

Optics express

Jae-Hyuck Yoo, Marlon G Menor, John J Adams, Rajesh N Raman, Jonathan R I Lee, Tammy Y Olson, Nan Shen, Joonki Suh, Stavros G Demos, Jeff Bude, Selim Elhadj

PMID: 27505731 DOI: 10.1364/OE.24.017616

Abstract

Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

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