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Niu G, Capellini G, Hatami F, et al. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS Appl Mater Interfaces. 2016;8(40):26948-26955doi: 10.1021/acsami.6b09592.
Niu, G., Capellini, G., Hatami, F., Di Bartolomeo, A., Niermann, T., Hussein, E. H., Schubert, M. A., Krause, H. M., Zaumseil, P., Skibitzki, O., Lupina, G., Masselink, W. T., Lehmann, M., Xie, Y. H., & Schroeder, T. (2016). Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS applied materials & interfaces, 8(40), 26948-26955. https://doi.org/10.1021/acsami.6b09592
Niu, Gang, et al. "Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure." ACS applied materials & interfaces vol. 8,40 (2016): 26948-26955. doi: https://doi.org/10.1021/acsami.6b09592
Niu G, Capellini G, Hatami F, Di Bartolomeo A, Niermann T, Hussein EH, Schubert MA, Krause HM, Zaumseil P, Skibitzki O, Lupina G, Masselink WT, Lehmann M, Xie YH, Schroeder T. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure. ACS Appl Mater Interfaces. 2016 Oct 12;8(40):26948-26955. doi: 10.1021/acsami.6b09592. Epub 2016 Sep 28. PMID: 27642767.
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ACS Appl Mater Interfaces. 2016 Oct 12;8(40):26948-26955. doi: 10.1021/acsami.6b09592. Epub 2016 Sep 28.

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

ACS applied materials & interfaces

Gang Niu, Giovanni Capellini, Fariba Hatami, Antonio Di Bartolomeo, Tore Niermann, Emad Hameed Hussein, Markus Andreas Schubert, Hans-Michael Krause, Peter Zaumseil, Oliver Skibitzki, Grzegorz Lupina, William Ted Masselink, Michael Lehmann, Ya-Hong Xie, Thomas Schroeder

Affiliations

  1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
  2. IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
  3. Dipartimento di Scienze, Università Roma Tre , Viale Marconi 446, 00146 Rome, Italy.
  4. Institut für Physik, Mathematisch-Naturwissenschaftliche Fakultät, Humboldt Universtät zu Berlin , Newtonstrasse 15, 12489 Berlin, Germany.
  5. Dipartimento di Fisica "E. R. Caianiello? Universita' degli Studi di Salerno Via Giovanni Paolo II, 132, Fisciano, Salerno I 84084, Italy.
  6. Technische Universität Berlin , Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin, Germany.
  7. University of California at Los Angeles , Department of Materials Science and Engineering, Los Angeles, California 90095-1595, United States.
  8. Brandenburgische Technische Universität , Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany.

PMID: 27642767 DOI: 10.1021/acsami.6b09592

Abstract

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO

Keywords: III−V compounds; graphene; monolithic integration; nanoheteroepitaxy; rectification

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