Display options
Cite
Cho YJ, Summerfield A, Davies A, et al. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Sci Rep. 2016;6:34474doi: 10.1038/srep34474.
Cho, Y. J., Summerfield, A., Davies, A., Cheng, T. S., Smith, E. F., Mellor, C. J., Khlobystov, A. N., Foxon, C. T., Eaves, L., Beton, P. H., & Novikov, S. V. (2016). Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Scientific reports, 634474. https://doi.org/10.1038/srep34474
Cho, Yong-Jin, et al. "Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy." Scientific reports vol. 6 (2016): 34474. doi: https://doi.org/10.1038/srep34474
Cho YJ, Summerfield A, Davies A, Cheng TS, Smith EF, Mellor CJ, Khlobystov AN, Foxon CT, Eaves L, Beton PH, Novikov SV. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy. Sci Rep. 2016 Sep 29;6:34474. doi: 10.1038/srep34474. PMID: 27681943; PMCID: PMC5041098.
Copy Download .nbib Format: NLM
Share it on

Sci Rep. 2016 Sep 29;6:34474. doi: 10.1038/srep34474.

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

Scientific reports

Yong-Jin Cho, Alex Summerfield, Andrew Davies, Tin S Cheng, Emily F Smith, Christopher J Mellor, Andrei N Khlobystov, C Thomas Foxon, Laurence Eaves, Peter H Beton, Sergei V Novikov

Affiliations

  1. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
  2. School of Chemistry, University of Nottingham, Nottingham NG7 2RD, UK.
  3. Nottingham Nanoscale and Microscale Research Centre, University of Nottingham, Nottingham NG7 2RD, UK.

PMID: 27681943 PMCID: PMC5041098 DOI: 10.1038/srep34474

Abstract

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp

References

  1. Nat Nanotechnol. 2010 Oct;5(10):722-6 - PubMed
  2. Nat Mater. 2010 May;9(5):430-5 - PubMed
  3. Phys Rev Lett. 2007 Mar 9;98(10):106802 - PubMed
  4. Nat Commun. 2015 Mar 11;6:6499 - PubMed
  5. Nano Lett. 2013 Jan 9;13(1):276-81 - PubMed
  6. Sci Rep. 2015 Nov 13;5:16642 - PubMed
  7. Nano Lett. 2011 May 11;11(5):2032-7 - PubMed
  8. Phys Rev B Condens Matter. 1989 Oct 15;40(11):7852-7859 - PubMed
  9. Nano Lett. 2016 May 11;16(5):3360-6 - PubMed
  10. Nano Lett. 2016 Apr 13;16(4):2387-92 - PubMed
  11. Nat Nanotechnol. 2014 Oct;9(10):808-13 - PubMed
  12. Sci Rep. 2016 Feb 17;6:21168 - PubMed
  13. Langmuir. 2016 Mar 22;32(11):2601-7 - PubMed
  14. Nat Nanotechnol. 2013 Apr;8(4):235-46 - PubMed
  15. Sci Rep. 2015 Oct 07;5:14760 - PubMed
  16. Phys Rev Lett. 2016 May 6;116(18):186603 - PubMed
  17. Nat Mater. 2013 Sep;12(9):792-7 - PubMed
  18. Sci Rep. 2013;3:2666 - PubMed
  19. Sci Rep. 2014 Aug 26;4:6146 - PubMed
  20. ACS Nano. 2012 Jul 24;6(7):6378-85 - PubMed
  21. Nature. 2013 May 30;497(7451):598-602 - PubMed
  22. Sci Rep. 2016 Mar 24;6:23547 - PubMed
  23. Sci Rep. 2016 Mar 01;6:22440 - PubMed
  24. Nat Commun. 2015 Jan 21;6:6160 - PubMed
  25. Science. 2012 Feb 24;335(6071):947-50 - PubMed
  26. Nano Lett. 2012 Mar 14;12(3):1707-10 - PubMed
  27. Science. 2004 Jan 9;303(5655):217-20 - PubMed

Publication Types