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Zhang J, Norris KJ, Gibson G, et al. Thermally induced crystallization in NbO. Sci Rep. 2016;6:34294doi: 10.1038/srep34294.
Zhang, J., Norris, K. J., Gibson, G., Zhao, D., Samuels, K., Zhang, M. M., Yang, J. J., Park, J., Sinclair, R., Jeon, Y., Li, Z., & Williams, R. S. (2016). Thermally induced crystallization in NbO. Scientific reports, 634294. https://doi.org/10.1038/srep34294
Zhang, Jiaming, et al. "Thermally induced crystallization in NbO." Scientific reports vol. 6 (2016): 34294. doi: https://doi.org/10.1038/srep34294
Zhang J, Norris KJ, Gibson G, Zhao D, Samuels K, Zhang MM, Yang JJ, Park J, Sinclair R, Jeon Y, Li Z, Williams RS. Thermally induced crystallization in NbO. Sci Rep. 2016 Sep 29;6:34294. doi: 10.1038/srep34294. PMID: 27682633; PMCID: PMC5041100.
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Sci Rep. 2016 Sep 29;6:34294. doi: 10.1038/srep34294.

Thermally induced crystallization in NbO.

Scientific reports

Jiaming Zhang, Kate J Norris, Gary Gibson, Dongxue Zhao, Katy Samuels, Minxian Max Zhang, J Joshua Yang, Joonsuk Park, Robert Sinclair, Yoocharn Jeon, Zhiyong Li, R Stanley Williams

Affiliations

  1. Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA.
  2. Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA.
  3. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.

PMID: 27682633 PMCID: PMC5041100 DOI: 10.1038/srep34294

Abstract

Niobium dioxide can exhibit negative differential resistance (NDR) in metal-insulator-metal (MIM) devices, which has recently attracted significant interest for its potential applications as a highly non-linear selector element in emerging nonvolatile memory (NVM) and as a locally-active element in neuromorphic circuits. In order to further understand the processing of this material system, we studied the effect of thermal annealing on a 15 nm thick NbO

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