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Tiddia M, Mula G, Sechi E, et al. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography. Nanoscale Res Lett. 2016;11(1):436doi: 10.1186/s11671-016-1654-8.
Tiddia, M., Mula, G., Sechi, E., Vacca, A., Cara, E., De Leo, N., Fretto, M., & Boarino, L. (2016). 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography. Nanoscale research letters, 11(1), 436. https://doi.org/10.1186/s11671-016-1654-8
Tiddia, Mariavitalia, et al. "4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography." Nanoscale research letters vol. 11,1 (2016): 436. doi: https://doi.org/10.1186/s11671-016-1654-8
Tiddia M, Mula G, Sechi E, Vacca A, Cara E, De Leo N, Fretto M, Boarino L. 4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography. Nanoscale Res Lett. 2016 Dec;11(1):436. doi: 10.1186/s11671-016-1654-8. Epub 2016 Sep 29. PMID: 27686091; PMCID: PMC5042913.
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Nanoscale Res Lett. 2016 Dec;11(1):436. doi: 10.1186/s11671-016-1654-8. Epub 2016 Sep 29.

4-Nitrobenzene Grafted in Porous Silicon: Application to Optical Lithography.

Nanoscale research letters

Mariavitalia Tiddia, Guido Mula, Elisa Sechi, Annalisa Vacca, Eleonora Cara, Natascia De Leo, Matteo Fretto, Luca Boarino

Affiliations

  1. Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, S.P. 8 km 0.700, 09042, Monserrato, CA, Italy. [email protected].
  2. Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, S.P. 8 km 0.700, 09042, Monserrato, CA, Italy. [email protected].
  3. Dipartimento di Ingegneria Meccanica, Chimica e dei Materiali, Università degli Studi di Cagliari, Via Marengo 3, 09123, Cagliari, CA, Italy.
  4. Nanofacility Piemonte INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, 10135, Torino, Italy.

PMID: 27686091 PMCID: PMC5042913 DOI: 10.1186/s11671-016-1654-8

Abstract

In this work, we report a method to process porous silicon to improve its chemical resistance to alkaline solution attacks based on the functionalization of the pore surface by the electrochemical reduction of 4-nitrobenzendiazonium salt. This method provides porous silicon with strong resistance to the etching solutions used in optical lithography and allows the fabrication of tailored metallic contacts on its surface. The samples were studied by chemical, electrochemical, and morphological methods. We demonstrate that the grafted samples show a resistance to harsh alkaline solution more than three orders of magnitude larger than that of pristine porous silicon, being mostly unmodified after about 40 min. The samples maintained open pores after the grafting, making them suitable for further treatments like filling by polymers. Optical lithography was performed on the functionalized samples, and electrochemical characterization results are shown.

Keywords: 4-Nitrobenzenediazonium grafting; Improved chemical resistance; Optical lithography; Porous silicon

References

  1. J Am Chem Soc. 2004 Jan 14;126(1):370-8 - PubMed
  2. Chem Soc Rev. 2005 May;34(5):429-39 - PubMed
  3. Langmuir. 2006 Jul 4;22(14):6214-21 - PubMed
  4. Nanoscale Res Lett. 2012 Jul 09;7(1):377 - PubMed

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