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Galceran R, Fina I, Cisneros-Fernández J, et al. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn. Sci Rep. 2016;6:35471doi: 10.1038/srep35471.
Galceran, R., Fina, I., Cisneros-Fernández, J., Bozzo, B., Frontera, C., López-Mir, L., Deniz, H., Park, K. W., Park, B. G., Balcells, L., Martí, X., Jungwirth, T., & Martínez, B. (2016). Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn. Scientific reports, 635471. https://doi.org/10.1038/srep35471
Galceran, R, et al. "Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn." Scientific reports vol. 6 (2016): 35471. doi: https://doi.org/10.1038/srep35471
Galceran R, Fina I, Cisneros-Fernández J, Bozzo B, Frontera C, López-Mir L, Deniz H, Park KW, Park BG, Balcells L, Martí X, Jungwirth T, Martínez B. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn. Sci Rep. 2016 Oct 20;6:35471. doi: 10.1038/srep35471. PMID: 27762278; PMCID: PMC5071853.
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Sci Rep. 2016 Oct 20;6:35471. doi: 10.1038/srep35471.

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

Scientific reports

R Galceran, I Fina, J Cisneros-Fernández, B Bozzo, C Frontera, L López-Mir, H Deniz, K-W Park, B-G Park, Ll Balcells, X Martí, T Jungwirth, B Martínez

Affiliations

  1. Institut de Ciència de Materials de Barcelona (CSIC), Campus de Bellaterra, 08193 Bellaterra, Spain.
  2. Unité Mixte de Physique, CNRS, Thales, Université Paris-Sud, Université Paris-Saclay, Palaiseau 91767, France.
  3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
  4. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany.
  5. Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Republic of Korea.
  6. Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., CZ-16253 Praha 6, Czech Republic.
  7. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.

PMID: 27762278 PMCID: PMC5071853 DOI: 10.1038/srep35471

Abstract

Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

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