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Gibelli F, Lombez L, Guillemoles JF. Accurate radiation temperature and chemical potential from quantitative photoluminescence analysis of hot carrier populations. J Phys Condens Matter. 2016;29(6):06LT02doi: 10.1088/1361-648X/29/6/06LT02.
Gibelli, F., Lombez, L., & Guillemoles, J. F. (2017). Accurate radiation temperature and chemical potential from quantitative photoluminescence analysis of hot carrier populations. Journal of physics. Condensed matter : an Institute of Physics journal, 29(6), 06LT02. https://doi.org/10.1088/1361-648X/29/6/06LT02
Gibelli, François, et al. "Accurate radiation temperature and chemical potential from quantitative photoluminescence analysis of hot carrier populations." Journal of physics. Condensed matter : an Institute of Physics journal vol. 29,6 (2017): 06LT02. doi: https://doi.org/10.1088/1361-648X/29/6/06LT02
Gibelli F, Lombez L, Guillemoles JF. Accurate radiation temperature and chemical potential from quantitative photoluminescence analysis of hot carrier populations. J Phys Condens Matter. 2017 Feb 15;29(6):06LT02. doi: 10.1088/1361-648X/29/6/06LT02. Epub 2016 Dec 19. PMID: 27991420.
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J Phys Condens Matter. 2017 Feb 15;29(6):06LT02. doi: 10.1088/1361-648X/29/6/06LT02. Epub 2016 Dec 19.

Accurate radiation temperature and chemical potential from quantitative photoluminescence analysis of hot carrier populations.

Journal of physics. Condensed matter : an Institute of Physics journal

François Gibelli, Laurent Lombez, Jean-François Guillemoles

Affiliations

  1. Institute of Research and Development of Photovoltaic Energy IRDEP (CNRS-ENSCP-EDF), UMR 7174, 6 quai Watier, 78401 Chatou, France. NextPV, International Associate Laboratory (LIA), 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.

PMID: 27991420 DOI: 10.1088/1361-648X/29/6/06LT02

Abstract

In order to characterize hot carrier populations in semiconductors, photoluminescence measurement is a convenient tool, enabling us to probe the carrier thermodynamical properties in a contactless way. However, the analysis of the photoluminescence spectra is based on some assumptions which will be discussed in this work. We especially emphasize the importance of the variation of the material absorptivity that should be considered to access accurate thermodynamical properties of the carriers, especially by varying the excitation power. The proposed method enables us to obtain more accurate results of thermodynamical properties by taking into account a rigorous physical description and finds direct application in investigating hot carrier solar cells, which are an adequate concept for achieving high conversion efficiencies with a relatively simple device architecture.

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