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Gouralnik AS, Pustovalov EV, Lin KW, et al. An approach to growth of Fe-Si multilayers with controlled composition profile-a way to exchange coupled thin films. Nanotechnology. 2017;28(11):115303doi: 10.1088/1361-6528/aa5c96.
Gouralnik, A. S., Pustovalov, E. V., Lin, K. W., Chuvilin, A. L., Chusovitina, S. V., Dotsenko, S. A., Cherednichenko, A. I., Plotnikov, V. S., Ivanov, V. A., Belokon, V. I., Tkachenko, I. A., & Galkin, N. G. (2017). An approach to growth of Fe-Si multilayers with controlled composition profile-a way to exchange coupled thin films. Nanotechnology, 28(11), 115303. https://doi.org/10.1088/1361-6528/aa5c96
Gouralnik, A S, et al. "An approach to growth of Fe-Si multilayers with controlled composition profile-a way to exchange coupled thin films." Nanotechnology vol. 28,11 (2017): 115303. doi: https://doi.org/10.1088/1361-6528/aa5c96
Gouralnik AS, Pustovalov EV, Lin KW, Chuvilin AL, Chusovitina SV, Dotsenko SA, Cherednichenko AI, Plotnikov VS, Ivanov VA, Belokon VI, Tkachenko IA, Galkin NG. An approach to growth of Fe-Si multilayers with controlled composition profile-a way to exchange coupled thin films. Nanotechnology. 2017 Mar 17;28(11):115303. doi: 10.1088/1361-6528/aa5c96. Epub 2017 Jan 31. PMID: 28140376.
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Nanotechnology. 2017 Mar 17;28(11):115303. doi: 10.1088/1361-6528/aa5c96. Epub 2017 Jan 31.

An approach to growth of Fe-Si multilayers with controlled composition profile-a way to exchange coupled thin films.

Nanotechnology

A S Gouralnik, E V Pustovalov, K-W Lin, A L Chuvilin, S V Chusovitina, S A Dotsenko, A I Cherednichenko, V S Plotnikov, V A Ivanov, V I Belokon, I A Tkachenko, N G Galkin

Affiliations

  1. Institute of Automation and Control Processes FEB RAS, 5, Radio Str., Vladivostok, Russia.

PMID: 28140376 DOI: 10.1088/1361-6528/aa5c96

Abstract

The growth, composition and structure of sandwich structures (Fe-rich layer/Si-rich layer/Fe-rich silicide layer) grown on a Si(111) surface were studied by a few complementary microscopic and spectroscopic techniques with high spatial resolution. Intermixing at the Fe/Si and Si/Fe interfaces is demonstrated. Fe-rich layers grown directly on the Si(111) surface are crystalline and have abrupt but rough interfaces at both sides. The succeeding layers are disordered and their interfaces are fuzzy. The distributions of Fe and Si within the layers are laterally non-uniform. The reproducible fabrication of thin non-magnetic silicide spacers of predetermined thickness is demonstrated. Sandwich structures with such spacers exhibit exchange coupling between ferromagnetic Fe-rich layers.

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