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Kosub T, Kopte M, Hühne R, et al. Purely antiferromagnetic magnetoelectric random access memory. Nat Commun. 2017;8:13985doi: 10.1038/ncomms13985.
Kosub, T., Kopte, M., Hühne, R., Appel, P., Shields, B., Maletinsky, P., Hübner, R., Liedke, M. O., Fassbender, J., Schmidt, O. G., & Makarov, D. (2017). Purely antiferromagnetic magnetoelectric random access memory. Nature communications, 813985. https://doi.org/10.1038/ncomms13985
Kosub, Tobias, et al. "Purely antiferromagnetic magnetoelectric random access memory." Nature communications vol. 8 (2017): 13985. doi: https://doi.org/10.1038/ncomms13985
Kosub T, Kopte M, Hühne R, Appel P, Shields B, Maletinsky P, Hübner R, Liedke MO, Fassbender J, Schmidt OG, Makarov D. Purely antiferromagnetic magnetoelectric random access memory. Nat Commun. 2017 Jan 03;8:13985. doi: 10.1038/ncomms13985. PMID: 28045029; PMCID: PMC5216083.
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Nat Commun. 2017 Jan 03;8:13985. doi: 10.1038/ncomms13985.

Purely antiferromagnetic magnetoelectric random access memory.

Nature communications

Tobias Kosub, Martin Kopte, Ruben Hühne, Patrick Appel, Brendan Shields, Patrick Maletinsky, René Hübner, Maciej Oskar Liedke, Jürgen Fassbender, Oliver G Schmidt, Denys Makarov

Affiliations

  1. Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden, Germany.
  2. Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
  3. Institute for Metallic Materials, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden.
  4. Department of Physics, University of Basel, 4056 Basel, Switzerland.
  5. Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, 01328 Dresden, Germany.

PMID: 28045029 PMCID: PMC5216083 DOI: 10.1038/ncomms13985

Abstract

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr

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