Display options
Cite
Prestigiacomo JC, Nath A, Osofsky MS, et al. Determining the nature of the gap in semiconducting graphene. Sci Rep. 2017;7:41713doi: 10.1038/srep41713.
Prestigiacomo, J. C., Nath, A., Osofsky, M. S., Hernández, S. C., Wheeler, V. D., Walton, S. G., & Gaskill, D. K. (2017). Determining the nature of the gap in semiconducting graphene. Scientific reports, 741713. https://doi.org/10.1038/srep41713
Prestigiacomo, J C, et al. "Determining the nature of the gap in semiconducting graphene." Scientific reports vol. 7 (2017): 41713. doi: https://doi.org/10.1038/srep41713
Prestigiacomo JC, Nath A, Osofsky MS, Hernández SC, Wheeler VD, Walton SG, Gaskill DK. Determining the nature of the gap in semiconducting graphene. Sci Rep. 2017 Feb 09;7:41713. doi: 10.1038/srep41713. PMID: 28181521; PMCID: PMC5299416.
Copy Download .nbib Format: NLM
Share it on

Sci Rep. 2017 Feb 09;7:41713. doi: 10.1038/srep41713.

Determining the nature of the gap in semiconducting graphene.

Scientific reports

J C Prestigiacomo, A Nath, M S Osofsky, S C Hernández, V D Wheeler, S G Walton, D K Gaskill

Affiliations

  1. Naval Research Laboratory, Washington, DC, USA.
  2. George Mason University, Fairfax, VA, USA.

PMID: 28181521 PMCID: PMC5299416 DOI: 10.1038/srep41713

Abstract

Since its discovery, graphene has held great promise as a two-dimensional (2D) metal with massless carriers and, thus, extremely high-mobility that is due to the character of the band structure that results in the so-called Dirac cone for the ideal, perfectly ordered crystal structure. This promise has led to only limited electronic device applications due to the lack of an energy gap which prevents the formation of conventional device geometries. Thus, several schemes for inducing a semiconductor band gap in graphene have been explored. These methods do result in samples whose resistivity increases with decreasing temperature, similar to the temperature dependence of a semiconductor. However, this temperature dependence can also be caused by highly diffusive transport that, in highly disordered materials, is caused by Anderson-Mott localization and which is not desirable for conventional device applications. In this letter, we demonstrate that in the diffusive case, the conventional description of the insulating state is inadequate and demonstrate a method for determining whether such transport behavior is due to a conventional semiconductor band gap.

Conflict of interest statement

The authors declare no competing financial interests.

References

  1. Sci Rep. 2015 Nov 26;5:16772 - PubMed
  2. Sci Rep. 2016 Feb 10;6:19939 - PubMed
  3. Phys Rev Lett. 2012 Mar 9;108(10):106601 - PubMed
  4. J Phys Condens Matter. 2010 May 26;22(20):205301 - PubMed
  5. Nano Lett. 2009 May;9(5):1752-8 - PubMed
  6. Phys Rev Lett. 2007 Apr 27;98(17):176805 - PubMed
  7. Phys Rev Lett. 2009 Jul 31;103(5):056404 - PubMed
  8. Phys Rev Lett. 2009 Jun 12;102(23):236805 - PubMed
  9. Phys Rev Lett. 2006 Nov 24;97(21):216803 - PubMed
  10. Phys Rev Lett. 2011 Oct 14;107(16):166602 - PubMed
  11. Nano Lett. 2010 Aug 11;10(8):3001-5 - PubMed
  12. Science. 2009 Jan 30;323(5914):610-3 - PubMed
  13. ACS Nano. 2013 Jun 25;7(6):4746-55 - PubMed
  14. Nanotechnology. 2010 Oct 29;21(43):435203 - PubMed

Publication Types