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J Phys Condens Matter. 2017 Mar 15;29(10):105302. doi: 10.1088/1361-648X/aa57d5. Epub 2017 Feb 01.

Excitonic complexes in GaN/(Al,Ga)N quantum dots.

Journal of physics. Condensed matter : an Institute of Physics journal

D Elmaghraoui, M Triki, S Jaziri, G Muñoz-Matutano, M Leroux, J Martinez-Pastor

Affiliations

  1. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 2092 El Manar, Tunisia.

PMID: 28145893 DOI: 10.1088/1361-648X/aa57d5

Abstract

Here we report a theoretical investigation of excitonic complexes in polar GaN/(Al,Ga)N quantum dots (QDs). A sum rule between the binding energies of charged excitons is used to calculate the biexciton binding energy. The binding energies of excitonic complexes in GaN/AlN are shown to be strongly correlated to the QD size. Due to the large hole localization, the positively charged exciton energy is found to be always blueshifted compared to the exciton one. The negatively charged exciton and the biexciton energy can be blueshifted or redshifted according to the QD size. Increasing the size of GaN/AlN QDs makes the identification of charged excitons difficult, and the use of an Al

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