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Nano Lett. 2017 Apr 12;17(4):2336-2341. doi: 10.1021/acs.nanolett.6b05223. Epub 2017 Feb 28.

Crystal Phases in Hybrid Metal-Semiconductor Nanowire Devices.

Nano letters

J David, F Rossella, M Rocci, D Ercolani, L Sorba, F Beltram, M Gemmi, S Roddaro

Affiliations

  1. Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia , Piazza San Silvestro 12, 56127 Pisa, Italy.
  2. NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza S. Silvestro 12, I-56127 Pisa, Italy.

PMID: 28231001 DOI: 10.1021/acs.nanolett.6b05223

Abstract

We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni

Keywords: Electron diffraction tomography; GaAs nanowires; hybrid metal−semiconductor nanowires; thermal annealing; transmission electron microscopy

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