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Jamond N, Chrétien P, Gatilova L, et al. Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact. Nanoscale. 2017;9(13):4610-4619doi: 10.1039/c7nr00647k.
Jamond, N., Chrétien, P., Gatilova, L., Galopin, E., Travers, L., Harmand, J. C., Glas, F., Houzé, F., & Gogneau, N. (2017). Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact. Nanoscale, 9(13), 4610-4619. https://doi.org/10.1039/c7nr00647k
Jamond, Nicolas, et al. "Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact." Nanoscale vol. 9,13 (2017): 4610-4619. doi: https://doi.org/10.1039/c7nr00647k
Jamond N, Chrétien P, Gatilova L, Galopin E, Travers L, Harmand JC, Glas F, Houzé F, Gogneau N. Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact. Nanoscale. 2017 Mar 30;9(13):4610-4619. doi: 10.1039/c7nr00647k. PMID: 28323294.
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Nanoscale. 2017 Mar 30;9(13):4610-4619. doi: 10.1039/c7nr00647k.

Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact.

Nanoscale

Nicolas Jamond, Pascal Chrétien, Lina Gatilova, Elisabeth Galopin, Laurent Travers, Jean-Christophe Harmand, Frank Glas, Frédéric Houzé, Noëlle Gogneau

Affiliations

  1. Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. [email protected].
  2. Laboratoire de Génie Electrique de Paris, UMR CNRS-Supélec 8507, Universités Pierre et Marie Curie et Paris-Sud, 11 rue Joliot-Curie, 91192 Gif Sur Yvette, France.
  3. Observatoire de Paris, LERMA, UMR 8112, avenue de l'Observatoire, 75014 Paris, France.

PMID: 28323294 DOI: 10.1039/c7nr00647k

Abstract

The performances of 1D-nanostructure based nanogenerators are governed by the ability of nanostructures to efficiently convert mechanical deformation into electrical energy, and by the efficiency with which this piezo-generated energy is harvested. In this paper, we highlight the crucial influence of the GaN nanowire-metal Schottky nanocontact on the energy harvesting efficiency. Three different metals, p-type doped diamond, PtSi and Pt/Ir, have been investigated. By using an atomic force microscope equipped with a Resiscope module, we demonstrate that the harvesting of piezo-generated energy is up to 2.4 times more efficient using a platinum-based Schottky nanocontact compared to a doped diamond-based nanocontact. In light of Schottky contact characteristics, we evidence that the conventional description of the Schottky diode cannot be applied. The contact is governed by its nanometer size. This specific behaviour induces notably a lowering of the Schottky barrier height, which gives rise to an enhanced conduction. We especially demonstrate that this effective thinning is directly correlated with the improvement of the energy harvesting efficiency, which is much pronounced for Pt-based Schottky diodes. These results constitute a building block to the overall improvement of NW-based nanogenerator devices.

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